Critical conditions for dislocation nucleation at surface steps
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430500531751
Reference29 articles.
1. Analysis of dislocation nucleation from a crystal surface based on the Peierls–Nabarro dislocation model
2. The Film Surface as the Site for Spontaneous Nucleation of Dislocation Half-Loops in Strained Heteroepitaxial Systems
3. Nature of misfit dislocation sources in strained‐layer semiconductor structures
4. Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures
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