Do moving basal dislocations in sapphire (α-Al2O3) have non-stoichiometric cores?
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430802672691
Reference34 articles.
1. Plastic Deformation of Ceramic-Oxide Single Crystals
2. Strength of Synthetic Single Crystal Sapphire and Ruby as a Function of Temperature and Orientation
3. Polygonization of a Plastically Bent Sapphire Crystal
4. Plastic deformation of single crystals of sapphire: Basal slip and twinning
5. Slip and Twinning in Sapphire (alpha-Al2O3)
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1. Dissociation of 13<101‾1> misfit dislocation at the interface of α-Ga2O3 thin film deposited on m-plane sapphire;Materials Science in Semiconductor Processing;2024-12
2. On the anion and cation positions within and nearby R(101¯2)$R(10\overline{1}2)$, Σ(202¯4)$\mathrm{\Sigma}(20\overline{2}4)$, and Π(101¯4)$\mathrm{\Pi}(10\overline{1}4)$ planes of α‐Al 2 O 3 corundum structure;Journal of the American Ceramic Society;2022-11-09
3. Core structure and dissociation energetics of basal edge dislocation in α-Al2O3: A combined atomistic simulation and transmission electron microscopy analysis;Acta Materialia;2014-02
4. Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles;Scientific Reports;2013-11-15
5. Periodic Nanowire Array at the Crystal Interface;ACS Nano;2013-07-05
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