Radiation damage in single crystals of silicox produced by bombardment with Ne+and P+ions
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337576908235575
Reference12 articles.
1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
2. The influence of temperature and channeling on ion-bombardment damage in Si
3. Irradiation damage in aluminium single crystals produced by 50-keV aluminium and copper ions
4. IMPLANTATION PROFILES FOR 40‐keV PHOSPHORUS IONS IN SILICON SINGLE‐CRYSTAL SUBSTRATES
5. Johansen, A., Sarholt-Kristensen, L. and Olsen, J. S. preparation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Channeling and related effects in the motion of charged particles through crystals;Reviews of Modern Physics;1974-01-01
2. X-ray study of lateral strains in ion-implanted silicon;Zeitschrift für Physik A Hadrons and nuclei;1973-08
3. Obituary;Radiation Effects;1972-04
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