High reactivity of H<sub>2</sub>O vapor on GaN surfaces-Reference-Cited by-同舟云学术

High reactivity of H₂O vapor on GaN surfaces

Published:2022-04-08 Issue:1 Volume:23 Page:189-198
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Sumiya Masatomo¹,Sumita Masato²,Tsuda Yasutaka³,Sakamoto Tetsuya³,Sang Liwen⁴,Harada Yoshitomo⁵,Yoshigoe Akitaka³

Affiliation:

1. Next Generation Semiconductor Group, National Institute for Materials Science, Tsukuba, Japan

2. Center for Advanced Intelligence Project (AIP), RIKEN, Tokyo, Japan

3. Materials Sciences Research Center, Japan Atomic Energy Agency, Hyogo, Japan

4. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Ibaraki, Japan

5. Research and Services Division of Materials Data and Integrated System, National Institute for Materials Science, Ibaraki, Japan

Funder

the Shared Use Program of JAEA Facilities

the JAEA Advanced Characterization Nanotechnology Platform as a program of the ‘Nanotechnology Platform’ of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan

JAEA beamline BL23SU

JSPS KAKENHI

TIA collaborative research program

HOKUSI of RIKEN

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/14686996.2022.2052180

Reference23 articles.

1. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

2. Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

3. Interface state characterization of ALD-Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures

4. Dependence of impurity incorporation on the polar direction of GaN film growth

5. Dynamic Observation and Theoretical Analysis of Initial O2 Molecule Adsorption on Polar and m-Plane Surfaces of GaN

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