Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces
Author:
Affiliation:
1. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
2. Department of Fundamental Bioscience, Shiga University of Medical Science, Otsu, Shiga, Japan
3. Kyushu Synchrotron Light Research Center, Tosu, Saga, Japan
Funder
Japan Society for the Promotion of Science
Publisher
Informa UK Limited
Subject
General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/14686996.2020.1736948
Reference33 articles.
1. Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories
2. Memristive devices for computing
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5. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications
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