Effective silicon production from SiCl4 source using hydrogen radicals generated and transported at atmospheric pressure-Reference-Cited by-同舟云学术

Effective silicon production from SiCl4 source using hydrogen radicals generated and transported at atmospheric pressure

Published:2020-01-31 Issue:1 Volume:21 Page:482-491
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Okamoto Yuji¹²,Sumiya Masatomo¹,Nakamura Yuya¹²,Suzuki Yoshikazu³

Affiliation:

1. Widegap Semiconductor Group, National Institute for Materials Science, Tsukuba, Japan

2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Japan

3. Faculty of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Japan

Funder

Japan Society for the Promotion of Science

Science and Technology Research Partnership for Sustainable Development

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/14686996.2020.1789438

Reference23 articles.

1. Lynch D, Ben W, Ji X, et al. Review of developments in production of silicon for photovoltaic, supplemental proceedings of TMS 2011 140th annual meeting and exhibition. Materials processing and energy materials, The Minerals Metals & Materials Society (TMS). New Jersey (USA): John Wiley & Sons Inc. 2011. p. 685–692.

2. Schweickert H, Reuschel K, Gutsche H. Production of high-purity semiconductor materials for electrical purposes. United States Patent, US3,011,877. 1961 Dec.5

3. Gutsche H. Method for producing highest-purity silicon for electric semiconductor devices. United State. Patent, US3,042,494. 1962 July 3

4. Thermodynamic Study on SiCl4 Hydrogenation System in Siemens Process

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