Harmonic generation using the non-linearity in the hot carrier characteristics of GaAs†
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207216908900064
Reference6 articles.
1. Behaviour of n-type gallium arsenide in strong microwave fields
2. The intervalley transfer mechanism of negative resistivity in bulk semiconductors
3. Displaced Maxwellian Calculation of Transport inn-Type GaAs
4. Microwave Harmonic Generation with Hot Electrons in n-Germanium
5. Hot carrier a.c. conductivity and harmonic generation in semiconductors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Efficiency of second harmonic generation under hot-electron condition in ZnO at 77 K;Czechoslovak Journal of Physics;1980-04
2. Microwave harmonic generation using the non-linearity of negative resistance in n-type GaAs under a small-signal excitation†;International Journal of Electronics;1973-11
3. Third harmonic generation using the hot-electron non-linearity of semiconductors;Journal of Physics D: Applied Physics;1970-06-01
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