Effect of UV radiation on ion-implanted Si-SiO2 structures
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/01422448508209695
Reference5 articles.
1. Interface states in the silicon/silicon-oxide system observed by thermally stimulated charge release
2. A Note on the Analysis of First‐Order Glow Curves
3. Ion-implantation associated defect production in silicon
4. Recombination enhanced defect reactions
5. Ionization enhanced annealing in phosphorus implanted silicon
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1. Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation;Radiation Effects and Defects in Solids;2016-03-03
2. Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure;Technical Physics;2009-02
3. Electron irradiation of ion-implanted n-type Si-SiO 2 structures studied by deep-level transient spectroscopy;Applied Physics A: Materials Science & Processing;1998-05-01
4. Annealing of radiation defects in helium-implanted SiSiO2 structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-09
5. Influence of Ro radiation upon ion-implanted MOS structures;Radiation Effects;1985-01
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