Double crystal x-ray observation of lattice strain induced by recoiled oxygen in through-oxide implanted silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/01422448508205238
Reference16 articles.
1. Anomalous residual damage in Si after annealing of ``through‐oxide'' arsenic implantations
2. Residual defects in Si produced by recoil implantation of oxygen
3. The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO2–Si
4. The effects of the recoil-implanted oxygen in Si on the electrical activation of As after through-oxide implantation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Radiation Damage;Computer Simulation of Ion-Solid Interactions;1991
2. Direct and Recoil Implantation, and Collisional Ion-Beam Mixing: Recent Low-Temperature Experiments;Materials Modification by High-fluence Ion Beams;1989
3. Characterization of lattice damage in ion implanted silicon by multiple crystal x-ray diffraction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01
4. Monte Carlo Simulation of the Annealing Kinetics of Oxygen Recoils Formed in Through-Oxide Implants on Silicon;physica status solidi (a);1986-03-16
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