Photoemission studies on in situ prepared hydrogenated amorphous silicon films-Reference-Cited by-同舟云学术

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Photoemission studies on in situ prepared hydrogenated amorphous silicon films

Published:1979-12 Issue:6 Volume:40 Page:433-450
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Roedern B. von¹²,Ley L.¹,Cardona M.¹,Smith F. W.¹³

Affiliation:

1. a Max-Planck-Institut für Festkörperforschung , 7000 , Stuttgartn , 80 , Federal Republic of, Germany

2. b Division of Applied Sciences, Pierce Hall , Harvard University , Cambridge , Massachusetts , 02138 , U.S.A.

3. c City College of New York , New York , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418637908226768

Reference28 articles.

1. Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors

2. Temperature dependence of the band structure of germanium- and zinc-blende-type semiconductors

3. Beyer , W. Mell , B. and Overhof , H. 1977. Amorphous and Liquid Semiconductors, Edited by: Spear , W. 328University of Edinburgh: C1CL.

4. On the deposition of amorphous silicon films from glow discharge plasmas of silane

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