Electron spin resonance in amorphous germanium and silicon
Author:
Affiliation:
1. a Fachbereich Physik, University of Marburg , 3550 , Marburg , Federal , Republic of Germany
2. b Institut for Theoretical Physics, Technical University of Berlin , 1000 , Berlin 12 , Federal , Republic of Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418637808225648
Reference25 articles.
1. Abragam , A. 1961. The Principles of Nuclear Magnetism, 108Oxford: Clarendon Press.
2. Nature of Localized States in Amorphous Semiconductors—A Study by Electron Spin Resonance
3. A Mathematical Model for the Narrowing of Spectral Lines by Exchange or Motion
4. Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide
5. Use of hydrogenation in structural and electronic studies of gap states in amorphous germanium
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