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The influence of hybridization on the electronic states at dislocations in semiconductors

  • Published:1978-02 Issue:2 Volume:37 Page:217-232
  • ISSN:1364-2812
  • Container-title:Philosophical Magazine B
  • language:en
  • Short-container-title:Philosophical Magazine B

Author:

Usadbl K. D.12,Schröter W.3

Affiliation:

1. a Institut für Theoretische Physik der Universität Göttingen , Göttingen , West Germany

2. b Gesamthochschule Duisburg, Laboratorium für Tieftemperaturphysik , 4000 , Duisburg 1 , West Germany

3. c IV. Physikalisches Institut der Universität Göttingen und Sonderforschungsbereich , 126 , Göttingen/Clausthal , West Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018

2. Dislocations;Materials Science and Technology;2013-02-15

3. Atomic structure and electronic states of extended defects in silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-01

4. Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects;Solid State Phenomena;2001-12

5. Optical Absorption Studies of Plastically Deformed InSb;physica status solidi (b);1984-10-01
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