1. New Materials;Möller,2000
2. W. Schröter, M. Seibt, Deep Levels of transition metal impurities in c-Si, in: R. Hull (Ed.), Properties of Crystalline Solids, EMIS DATAREVIEWS SERIES, 1999, No. 20, p. 561.
3. See, e.g., J.W. Orton, P. Blood, The electrical characterization of semiconductors: measurement of minority carrier properties, in: N.H. March (Ed.), Techniques of Physics, Vol. 13, Academic Press, London, 1990, p. 4.
4. High-Temperature Properties of Transition Elements in Silicon;Schröter,2000
5. Interfaces;Hull,2000