Experimental evidence for the existence of a mobility edge in silicon carbide inversion layers-Reference-Cited by-同舟云学术

Experimental evidence for the existence of a mobility edge in silicon carbide inversion layers

Published:1995-03 Issue:3 Volume:71 Page:413-426
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Ouisse T.¹,Billon T.²

Affiliation:

1. a Laboratoire de Physique des Composants à Semiconducteurs (Unité de Recherche associte au CNRS 840), Ecole Nationale Supérieure d'Electronique et de Radio-electricité de Grenoble , 23, rue des Martyrs, 38016 , Grenoble Cedex , France

2. b Laboratoire d'Etudes et Technologie de l'Informatique (Commissariat à 1'Energie Atomique-Technologies Avanctes), Division Microélectronique, Centre d'Etudes Nucléaires de Grenoble , 85X, F38041 , Grenoble Cedex , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819508239044

Reference28 articles.

1. Threshold conduction in inversion layers

2. Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized Regimes

3. Electronic properties of two-dimensional systems

4. High temperature silicon carbide MOSFETs with very low drain leakage current

5. Theory of the carrier‐density fluctuations in an IGFET near threshold

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