Determination of the energy band diagram for a-Si1-xYx:H/c-Si (Y = C or Ge) heterojunctions: Analysis of transport properties
Author:
Affiliation:
1. a Laboratoire de Physique des Solides de Bellevue, CNRS , 1 place A. Briand, F-92195, Meudon Cedex , France
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108207633
Reference13 articles.
1. Energy band diagram of the a-Si:H/c-Si interface as determined by internal photoemission
2. Band offsets and deep defect distribution in hydrogenated amorphous silicon‐crystalline silicon heterostructures
3. Photoemission studies ofa‐SixC1−x:H/a‐Si anda‐SixC1−x:H/ hydrogenated amorphous silicon heterojunctions
4. Conduction properties of thin N+/I/N+ a-Si:H structures
5. Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
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1. Electronic Properties of Ultrathin a-Si:H Layers and the a-Si:H/c-Si Interface;Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells;2012
2. Anodization of undoped amorphous silicon by electrical injection of holes;Solid State Communications;1999-02
3. Electronic states and band lineups in c-Si(100)/a-Si1−xCx:H heterojunctions;Physical Review B;1997-04-15
4. Band discontinuities at heterojunctions between crystalline and amorphous silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-07
5. Properties of amorphous silicon/amorphous silicon‐germanium multilayers;Journal of Applied Physics;1994-02
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