Real-space method for total-energy calculations in semiconductors: Estimationx of stacking fault energies
Author:
Affiliation:
1. a Institut für Metallphysik der Universität Göttingen , D-3400 Göttingen, Hospitalstr. 3/5, Germany
2. b Physik Department , TU München D-8046, Garching , Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108215266
Reference26 articles.
1. Influence of spin relaxation on triplet-triplet exciton annihilation in organic crystals. Application to naphthalene
2. Ground State of the Electron Gas by a Stochastic Method
3. Theoretical study of stacking faults in silicon
4. Cohen , M. L. and Chelikowsky , J. R. 1988.Electronic Structure and Optical Properties of Semiconductors (Springer Series in Solid-state Science), Vol. 15, 16Berlin: Springer-Verlag.
5. Direct TEM determination of intrinsic and extrinsic stacking fault energies of silicon
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