Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation-Reference-Cited by-同舟云学术

Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

Published:1992-05 Issue:5 Volume:65 Page:1001-1009
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Yasuda H.¹,Mori H.²,Sakata T.²,Naka M.³,Fujita H.⁴

Affiliation:

1. a Department of Materials Science and Engineering , Faculty of Engineering, Osaka University , Suita , Osaka , 565 , Japan

2. b Research Center for Ultra-High Voltage Electron Microscopy , Osaka University , Suita , Osaka , 565 , Japan

3. c Welding Research Institute, Osaka University , Suita , Osaka , 565 , Japan

4. d Research Institute for Science and Engineering , Kinki University , Kowakae, Higashi-Osaka , Osaka , 577 , Japan

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819208217916

Reference18 articles.

1. Two hole resonances in the XVV Auger spectra of solids

2. Deboer , F. R. Boom , R. Mattens , W. C. M. Miedema , A. R. and Niessen , A. K. 1988. Cohesion in Metals Transition Metal Alloys, 519Amsterdam: North Holland.

3. Fujita , H. 1976. Dislocations, Edited by: Fujita , H. 6Osaka University. 1985, In situ Experiments with HVEM (Res. Centre for Ultra-High Voltage Electron Microscopy, Osaka University), p. 1.

4. Relationship between the Auger line shape and the electronic properties of graphite

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