Irradiation temperature dependence of chemical and topological disordering induced by high-energy electron irradiation in GaSb
Author:
Affiliation:
1. a Research Center for Ultra-High Voltage Electron Microscopy , Osaka University , Yamadaoka, Suita, Osaka , 565-0871 , Japan
2. b National Research Institute for Metals, Sakura , Tsukuba, Ibaraki , 305-0003 , Japan
Publisher
Informa UK Limited
Subject
Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418610008216477
Reference14 articles.
1. Hirata , M. Takeda , S. Hirata , M. and Kiritani , M. Proceedings of the 13th International Conference on Defects in Semiconductors. pp.359
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4. Disorder-induced amorphization
5. The relationship between the chemical and topological disorder in the intermetallic compound Cu4Ti3
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