Free carrier ambipolar diffusion length in amorphous semiconductors-Reference-Cited by-同舟云学术

Free carrier ambipolar diffusion length in amorphous semiconductors

Published:1997-06 Issue:6 Volume:75 Page:925-936
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Shah A.¹,Sauvajn E.¹,Hubin J.¹,Pipoz P.¹,Hof C.¹

Affiliation:

1. a Institut de Microtechnique, Université de Neuchâtel , rue A.-L. Breguet 2, 2000 Neuchâtel, Switzerland

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819708205717

Reference23 articles.

1. Generalized theory for analytical simulation of the steady-state photocarrier grating technique

2. Theory of the small photocarrier grating under the application of an electric field

3. Mobility lifetime product—A tool for correlatinga‐Si:H film properties and solar cell performances

4. Beck , N. Shah , A. Wyrsch , N. and Fischer , D. Proceedings of the 24th IEEE Photovoltaic Specialist Conference. 1994. pp.476 Hawaii (Library of Congress)

5. Ambipolar diffusion length and photoconductivity measurements on ‘‘midgap’’ hydrogenated microcrystalline silicon

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