Optimization of light-induced metastable changes in hydrogenated amorphous silicon-germanium alloys

Author:

Hazra Sukti1,Middya A. R.1,Ray Swati1

Affiliation:

1. a Energy Research Unit, Indian Association for the Cultivation of Science , Jadavpur, Calcutta , 700 032 , India

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Reference17 articles.

1. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects

2. Bauer , G. H. Abel , C. D. and Schumn , G. Proceedings of the Sixth International Photovoltaic Science and Engineering Conference. Edited by: Das , B. K. and Sing , S. P. pp.339

3. Electronic properties of hydrogenated amorphous silicon-germanium alloys

4. Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cells

5. Jackson , W. B. and Kakalios , J. 1988. Amorphous Silicon and Related Materials, Edited by: Fritzche , H. 247Singapore: World Scientific.

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