Optimization of light-induced metastable changes in hydrogenated amorphous silicon-germanium alloys
Author:
Affiliation:
1. a Energy Research Unit, Indian Association for the Cultivation of Science , Jadavpur, Calcutta , 700 032 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819708205712
Reference17 articles.
1. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects
2. Bauer , G. H. Abel , C. D. and Schumn , G. Proceedings of the Sixth International Photovoltaic Science and Engineering Conference. Edited by: Das , B. K. and Sing , S. P. pp.339
3. Electronic properties of hydrogenated amorphous silicon-germanium alloys
4. Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cells
5. Jackson , W. B. and Kakalios , J. 1988. Amorphous Silicon and Related Materials, Edited by: Fritzche , H. 247Singapore: World Scientific.
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1. High-performance a-SiGe:H thin film prepared by plasma-enhanced chemical vapor deposition with high plasma power for solar-cell application;physica status solidi (a);2012-10-10
2. Light-induced defects in hydrogenated amorphous silicon germanium alloys;Solar Energy Materials and Solar Cells;2003-07
3. Metastable Defects in the Amorphous Silicon-Germanium Alloys;MRS Proceedings;2003
4. Frequency-resolved photoconductivity in a-SiGe:H;Thin Solid Films;1998-11
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