Electrical conductivity and metal-insulator transition in the amorphous system CrxGe1-x-Reference-Cited by-同舟云学术

Electrical conductivity and metal-insulator transition in the amorphous system CrxGe1-x

Published:1991-07 Issue:1 Volume:64 Page:49-55
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Elefant D.¹,Gladun C.¹,Heinrich A.¹,Schumann J.¹,Vinzelberg H.¹

Affiliation:

1. a Zentralinstitut fur Festkörperphysik und Werkstofforschung Institut für Festkörperphysik und-chemie , 0-8027 , Dresden , Helmholtzstr. 20, Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819108207602

Reference8 articles.

1. Coulomb gap and low temperature conductivity of disordered systems

2. The metal-semiconductor transition in amorphous Si1-xCrxfilms. II. Range of validity of the scaling behaviour of the conductivity, (T,x)= (T/T0(x)), in the semiconducting region and determination of the minimum metallic conductivity from (T,x) in the metallic region

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