Preparation of heavily doped polycrystalline and amorphous silicon films by evaporation
Author:
Affiliation:
1. a Institut für Angewandte Physik der T.U. Clausthal , West Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108205539
Reference13 articles.
1. Structural, Optical, and Electrical Properties of Amorphous Silicon Films
2. Doctoral Thesis;Dellafera P.,1982
3. An alternative method of preparing hydrogen-doped evaporated amorphous silicon preliminary report
4. Optical and electrical properties of evaporated amorphous silicon with hydrogen
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1. Aluminum mediated low temperature growth of crystalline silicon by plasma-enhanced chemical vapor and sputter deposition;Applied Physics Letters;1998-03-23
2. Aluminium doping of a-Ge:H;Journal of Physics: Condensed Matter;1993-08-16
3. Aluminium in hydrogenated amorphous germanium;Philosophical Magazine Letters;1993-04
4. Migration of the aluminium enhanced crystal growth process from quartz to glass using EBEP-CVD;Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
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