Electroluminescence and band structure in p-AlxGa1−xAs/GaAs1−yPy/n-AlxGa1−xAs under uniaxial compression
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/08957950903457770
Reference8 articles.
1. Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
2. Strained layer GaAs1−yPy‐AlGaAs and InxGa1−xAs‐AlGaAs quantum well diode lasers
3. Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells
4. Energy spectrum and topology evolution of the Fermi surface of two-dimensional holes inGaAs/Al0.5Ga0.5Asheterostructures under uniaxial compression: Theory and experiment
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