Sol-gel derived RuO2-PZT-RuO2ferroelectric capacitors
Author:
Affiliation:
1. a Donnelly Corporation , 4545 East Fort Lowell Road, Tucson, AZ, 85712
2. b Department of Materials Science and Engineering , University of Arizona , Tucson, AZ, 85721
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584589708221706
Reference28 articles.
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2. Fatigue of organometallic chemical vapor deposited PbZrxTi1−xO3 thin films with Ru/Ruo2 and Pt/Pt electrodes
3. Microstructure and 90° domain assemblages of Pb(Zr, Ti)O3//RuO2 capacitors as a function of Zr-to-Ti stoichiometry
4. High temperature polarization retention of a Pb(Zr0.52Ti0.48)O3/YBa2Cu3O7−x memory cell
5. Growth and structural properties of epitaxial Pb(ZrxTi1−x)O3 films and Pb(ZrxTi1−x)O3-cuprate heterostructures
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1. Highly conductive RuO2 thin films from novel facile aqueous chemical solution deposition;Journal of Sol-Gel Science and Technology;2023-09-16
2. Microstructure and properties of sol-gel derived Pb(Zr0.3Ti0.7)O3 thin films on GaN/sapphire for nanoelectromechanical systems;Journal of Sol-Gel Science and Technology;2007-02-09
3. X-ray photoelectron spectroscopy and micro-Raman analysis of conductive RuO2 thin films;Journal of Applied Physics;2001-03
4. Characterization of Conductive RuO2 Thin Film as Bottom electrodes for Ferroelectric Thin Films;MRS Proceedings;2000
5. Laser sintering of perovskite-oxide and metal coatings by the sol gel process;Applied Physics A: Materials Science & Processing;1999-12-01
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