Effects of top electrode annealing on the PZT thin films-Reference-Cited by-同舟云学术

Effects of top electrode annealing on the PZT thin films

Published:1997-04 Issue:1-4 Volume:16 Page:165-174
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Lee Eun-G.¹²,Wouters Dirk J.¹,Willems Geert¹,Maes Herman E.¹

Affiliation:

1. a Dept. Materials Science & Engineering , Chosun University, Kwangju 501-759

2. b SOUTH KOREA IMEC , Kapeldreef 75, B-3001 Leuven, BELGIUM

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708013038

Reference18 articles.

1. Ferroelectric Memories

2. Moazzami , R. Maniar , P. D. Jones , R. E. Campbell , A. C. Jr. and Mogab , C. J. 1992.IEDM Tech. Dig., 973New York: IEEE.

3. Quantitative measurement of space‐charge effects in lead zirconate‐titanate memories

4. Electrodes for PbZr x Ti1 − x O 3 Ferroelectric Thin Films

5. Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model

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