Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals-Reference-Cited by-同舟云学术

Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals

Published:1998-03 Issue:1-4 Volume:22 Page:83-94
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Grossmann M.¹,Hoffmann S.¹,Gusowski S.¹,Waser R.¹,Streiffer S. K.²,Basceri C.²,Parker C. B.²,Lash S. E.²,Kingon A. I.²

Affiliation:

1. a Institut fuer Werkstoffe der Elektrotechnik, University of Technology Aachen , D-52056 , Aachen , Federal Republic of Germany

2. b Department of Materials Science and Engineering , North Carolina State University, Raleigh , North Carolina , 27695-7907

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808208032

Reference14 articles.

1. Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramics

2. Analysis of the Resistance Degradation ofSrTiO3andBaxSr(1-x)TiO3Thin Films

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