Intrinsic stress dependence of Pt hillock formation and its related electrical properties of SBT capacitor

Author:

Kweon Soon Yong1,Yeom Seung Jin1,Sun Ho Jung1,Kim Nam Kyeong1,Yu Yong Sik1,Lee Sahang Kyoo1

Affiliation:

1. a Semiconductor Advanced Research Division , HYUNDAI Electronics Industries Co. Ltd. , San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do , 467-860 , Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Fatigue-free ferroelectric capacitors with platinum electrodes

2. Quantum jump and “kaizen” toward commercialization of ferroelectric ULSI memories

3. Al-Shareef , H. N. and Kingon , A. I. 1996. FERROELECTRIC THIN FILMS: SYNTHESIS AND BASIC PROPERTIES, Edited by: Paz de Arauzo , C. A. Scott , J. F. and Taylor , G. W. p. 193Gordon and Breach Publishers. Chap. 7

4. Intrinsic stress dependence of c-axis orientation ratio in PbTiO3 thin films deposited by reactive sputtering

5. Mechanical Properties of Thin Films

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