Intrinsic stress dependence of Pt hillock formation and its related electrical properties of SBT capacitor-Reference-Cited by-同舟云学术

Intrinsic stress dependence of Pt hillock formation and its related electrical properties of SBT capacitor

Published:1999-09 Issue:1-4 Volume:25 Page:299-309
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Kweon Soon Yong¹,Yeom Seung Jin¹,Sun Ho Jung¹,Kim Nam Kyeong¹,Yu Yong Sik¹,Lee Sahang Kyoo¹

Affiliation:

1. a Semiconductor Advanced Research Division , HYUNDAI Electronics Industries Co. Ltd. , San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do , 467-860 , Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908210180

Reference7 articles.

1. Fatigue-free ferroelectric capacitors with platinum electrodes

2. Quantum jump and “kaizen” toward commercialization of ferroelectric ULSI memories

3. Al-Shareef , H. N. and Kingon , A. I. 1996. FERROELECTRIC THIN FILMS: SYNTHESIS AND BASIC PROPERTIES, Edited by: Paz de Arauzo , C. A. Scott , J. F. and Taylor , G. W. p. 193Gordon and Breach Publishers. Chap. 7

4. Intrinsic stress dependence of c-axis orientation ratio in PbTiO3 thin films deposited by reactive sputtering

5. Mechanical Properties of Thin Films

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