Critical thickness and surface oxidation of epitaxial AIN thin films-Reference-Cited by-同舟云学术

Critical thickness and surface oxidation of epitaxial AIN thin films

Published:1999-08 Issue:1-4 Volume:24 Page:129-137
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Kim Jin Woo¹,Lee Su-Jae¹,Kang Kwang-Yong¹,Kim Seong Hyun¹,Kim Hyung Kook²

Affiliation:

1. a Research Department , Electronics and Telecommunications Research Institute , Taejon, 305-350, Korea

2. b Department of Physics , Pusan National University , Pusan, 609-735, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908215585

Reference11 articles.

1. Microstructure and thermal conductivity of epitaxial AlN thin films

2. GaN, AlN, and InN: A review

3. High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition

4. Epitaxial growth in large‐lattice‐mismatch systems

5. A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate

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