Influence of the growth temperature on the epitaxial quality of PbTiO3 films deposited in-situ by sputtering-Reference-Cited by-同舟云学术

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Influence of the growth temperature on the epitaxial quality of PbTiO3 films deposited in-situ by sputtering

Published:1996-12 Issue:4 Volume:13 Page:215-224
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Jaber B.¹,Remiens D.¹,Thierry B.¹,Perrin A.²,Guilloux-Viry M.²

Affiliation:

1. a Laboratoire des Matériaux Avancés Céramiques-Critt Céramiques Fines Techniques, Université de Valenciennes et du Hainaut-Cambrésis , Z.I. Champ de I'Abbesse, 59600 , Maubeuge , France

2. b Laboratoire de Chimie du Solide et Inorganique Moléculaire, Ura Cnrs 1495-Université de Rennes I , Avenue du Général Leclerc-, 5402 , Rennes , Cedex , France

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589608012317

Reference13 articles.

1. Ferroelectric thin films for electronic applications

2. Epitaxial PbTiO3thin films grown by organometallic chemical vapor deposition

3. PbTiO3 thin films prepared by metalorganic chemical vapor deposition on LaAlO3

4. Epitaxial growth of PbTiO3 thin films on (001) SrTiO3 from solution precursors

5. Substrate and temperature effects in lead zirconate titanate films produced by facing targets sputtering

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