Electrical properties of paraelectric PLT(28) thin films deposited by dc magnetron sputtering-Reference-Cited by-同舟云学术

Electrical properties of paraelectric PLT(28) thin films deposited by dc magnetron sputtering

Published:1996-10 Issue:2-4 Volume:12 Page:241-249
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Kim H. H.¹,Park D. H.²,Lim K. J.³

Affiliation:

1. a Department of Electronic Engineering , Doowon Institute of Technology , Kyeonggi-Do, Korea

2. b Department of Electrical Engineering , Wonkwang University , Chunbuk, Korea

3. c Department of Electrical Engineering , Chungbuk National University , Chungbuk, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589608013067

Reference8 articles.

1. Sputtering preparation of ferroelectric PLZT thin films and their optical applications

2. Preparation and characteristics of pyroelectric infrared sensors made ofc‐axis oriented La‐modified PbTi03thin films

3. Annealing of lead zirconate titanate (65/35) thin films for ultra large scale integration storage dielectric applications: Phase transformation and electrical characteristics

4. Sputtering of single and multiple component materials

5. Composition/structure/property relations of multi-ion-beam reactive sputtered lead lanthanum titanate thin films: Part III. Electrical properties

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