Annealing effects on the internal bias field in ferroelectric PZT thin films with self-polarization-Reference-Cited by-同舟云学术

Annealing effects on the internal bias field in ferroelectric PZT thin films with self-polarization

Published:1999-07 Issue:1-4 Volume:23 Page:25-43
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Sun Shan¹²,Wang Yongmei¹³,Fuierer Paul A.¹,Tuttle Bruce A.⁴

Affiliation:

1. a Department of Materials and Metallurgical Engineering , New Mexico Institute of Mining and Technology , Socorro, NM, 87801, USA

2. c Ramtron International Corporation , 1850 Ramtron Drive, Colorado Springs, CO, 80921, USA

3. d Advanced Assembling Technology, Flextronics International , 2090, Fortune Drive, San Jose, CA95131, USA

4. b Electronic Ceramic Division , Sandia National Laboratories , Albuquerque, NM, 87185, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908210138

Reference15 articles.

1. Depolarization and hysteresis loop asymmetry in PZT thin films with self polarization

2. Pyroelectric properties and application to infrared sensors of PbTiO3, PbLaTiO3and PbZrTiO3ferroelectric thin films

3. Controlling the Crystal Orientations of Lead Titanate Thin Films

4. Voltage offsets in (Pb,La)(Zr,Ti)O3 thin films

5. Ferroelectric Film Self-Polarization

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