A review of composition-structure-property relationships for PZT-based heterostructure capacitors-Reference-Cited by-同舟云学术

A review of composition-structure-property relationships for PZT-based heterostructure capacitors

Published:1995-01 Issue:1-4 Volume:6 Page:173-187
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Auciello Orlando¹²,Gifford Kenneth D.²,Lichtenwalner Daniel J.²,Dat Rovindra²,Al-Shareef Husam N.¹,Bellur Kashyap. R.²,Kincon Angus I.²

Affiliation:

1. a MCNC, Electronics Technology Division , Research Triangle Park, NC, 27709

2. b N.C. State University, Materials Science and Engineering , Raleigh, NC, 27695

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508019363

Reference27 articles.

1. Electrical and reliability properties of PZT thin films for ULSI DRAM applications

2. Miyasaka , Y. Sakuma , T. Matsubara , S. Watanabe , H. and Koyama , K. 1992. “Proceedings of the 4th International Symposium on Integrated Ferroelectrics”. Edited by: Paz de Araujo , C. A. Colorado Springs: University of Colorado Press.

3. An experimental 512-bit nonvolatile memory with ferroelectric storage cell

4. Ferroelectric Memories

5. Integrated sol-gel PZT thin-films on Pt, Si, and GaAs for non-volatile memory applications

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