Growth and electrical properties of Pb(Zr,Ti)O3 thin films by sputtering using an alloy target-Reference-Cited by-同舟云学术

Growth and electrical properties of Pb(Zr,Ti)O3 thin films by sputtering using an alloy target

Published:1994-11 Issue:3 Volume:5 Page:255-263
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Hayashi K.¹,Shimizu M.²,Shiosaki T.²

Affiliation:

1. a Inorganic Materials Research Laboratory, Ube Industries, Ltd. , 1978-5 Kogushi, Ube City Yamaguchi Prefecture, 755, Japan

2. b Department of Electronics, Faculty of Engineering , Kyoto University , Yoshida-Honmachi, Sakyo-ku, Kyoto, 606, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589408017019

Reference7 articles.

1. Preparation and Properties of Lead Zirconate-Titanate Thin Films

2. Preparation and Switching Kinetics of Pb(Zr, Ti)O3Thin Films Deposited by Reactive Sputtering

3. Metalorganic Chemical Vapor Deposition ofc-Axis Oriented PZT Thin Films

4. Preparation of Pb(Zr, Ti)O3Films on Si Substrate by Laser Ablation

5. Crystallization of Sol Gel Pzt on Aluminium and Platinum Metallizations

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1. The use of voltage to accelerate the endurance degradation of PZT capacitors;Integrated Ferroelectrics;1997-04

2. Orientation Characteristics with Process Parameters of PLZT(X/70/100) Thin Films Prepared by RF-Magnetron Sputtering;MRS Proceedings;1997