Lead based ferroelectric capacitors for low voltage non-volatile memory applications-Reference-Cited by-同舟云学术

Lead based ferroelectric capacitors for low voltage non-volatile memory applications

Published:1998-04 Issue:1-4 Volume:19 Page:159-177
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Aggarwal S.¹,Prakash A. S.¹,Song T. K.¹,Sadashivan S.¹,Dhote A. M.¹,Yang B.¹,Ramesh R.¹,Kisler Y.²,Bernacki S. E.²

Affiliation:

1. a Department of Materials and Nuclear Engineering and Center for Superconductivity Research , University of Maryland , College Park, MD, 20742, USA

2. b Raytheon Company , Lexington, MA, 02173, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808012702

Reference30 articles.

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2. Mansour , S. A. Binford , D. A. and West , R. W. 1992.Integrated FerroelectricsEdited by: Taylor , G. W. Vol. 1, 43–56.

3. Cheung , J. T. Morgan , P. E. D. and Neurogankar , R. 1992.Proceedings of the Fourth International Symposium on Integrated FerroelectricsEdited by: Panhozler , R. 158–170.

4. Structural and electrical properties of La0.5Sr0.5CoO3epitaxial films

5. Al-Shareef , H. N. and Kingon , A. I. 1996.Ferroelectric Thin Films: Synthesis and Basic PropertiesEdited by: Araujo , C. P. and Scott , J. F. 193–230.

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