1. See for example articles in “Ferroelectric Thin Films: I-VI,” Mater. Res. Soc. Symp. Proc. (Materials Research Society, Pittsburgh, 1992-1997); Proceedings of the International Symposium on Integrated Ferroelectrics, (Gordon and Breach, Switzerland, 1992-1997); Ferroelectric thin films: Synthesis and Properties , Vols. I&II, edited by C.A. Paz de Araujo, J.F. Scott and G.W. Taylor, (Gordon and Breach, Amsterdam, 1996); Thin Film Ferroelectric Materials and Devices , edited by R. Ramesh, (Kluwer Academic, Norwell, MA, 1997)
2. M.E. Lines A.M. Glass in Principles and Applications of Ferroelectrics and Related Materials , edited by W. Marshall and D.H. Wilkinson, (Oxford, Clarendon, 1977)
3. Ferroelectric Memories
4. The use of titanium-based contact barrier layers in silicon technology
5. La0.5Sr0.5CoO3/Pb(Nb0.04Zr0.28Ti0.68)O3/La0.5Sr0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier