Fatigue free ferroelectric Pb5Ge3O11 thin films prepared by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Fatigue free ferroelectric Pb5Ge3O11 thin films prepared by metalorganic chemical vapor deposition

Published:1999-10 Issue:1-4 Volume:26 Page:75-83
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Li Tingkai¹,Zhang Fengyan¹,Ono Yoshi¹,Hsu Sheng Teng¹

Affiliation:

1. a SHARP Laboratories of America , Inc. 5700 NW Pacific Rim Blvd., Camas, WA, 98607, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908215612

Reference11 articles.

1. Preparation and characteristics of pyroelectric infrared sensors made ofc‐axis oriented La‐modified PbTi03thin films

2. Fatigue-free SrBi2(TaxNb1−x)2O9 ferroelectric thin films

3. Fatigue-free ferroelectric capacitors with platinum electrodes

4. Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrahigh resolution of lead zirconate titanate 30/70 domains as imaged by piezoforce microscopy;Nanotechnology;2002-05-28

2. Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device;Applied Physics Letters;2001-09-10

3. The Properties of Mfmos and MFOS Capacitors with High K Gate Oxides for one Transistor Memory Applications;MRS Proceedings;2000

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