Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1401092
Reference7 articles.
1. Preparation of Bi4Ti3O12Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
2. Epitaxial Growth of Ferroelectric YMnO3Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
3. Properties of Ferroelectric Memory FET Using Sr2(Ta, Nb)2O7Thin Film
4. The ferroelectric properties of c-axis oriented Pb5Ge3O11 thin films prepared by metalorganic chemical vapor deposition
5. MFMOS Capacitor with Pb5Ge3O11 Thin Film for One Transistor Ferroelectric Memory Applications
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