Preparation of Bi4Ti3O12 films by MOCVD and their application to memory devices-Reference-Cited by-同舟云学术

Preparation of Bi4Ti3O12 films by MOCVD and their application to memory devices

Published:1995-01 Issue:1-4 Volume:6 Page:35-46
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Nakamura Takashi¹,Muhammet Rusul²,Shimizu Masaru²,Shiosaki Tadashi²

Affiliation:

1. a Rohm Co.,Ltd. , 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615, Japan

2. b Department of Electronics , Faculty of Engineering, Kyoto University , Yoshida Honmachi, Sakyo-ku, Kyoto, 606, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508019352

Reference7 articles.

1. Ferroelectric Memories

2. The research status and device potential of ferroelectric thin films

3. Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors

4. Ferroelectric field‐effect memory device using Bi4Ti3O12film

5. Matsui , Y. Higuma , Y. Okuyama , M. Nakagawa , T. and Hamakawa , Y. Proc. 1st Meet. Ferroelectric Materials and Their Applications. 1977, Kyoto. pp.239Kyoto: Ferro. Mater. & Appl. Office.

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