Pb(Zr,Ti)O3-silicon heterostructures fabricated by direct wafer bonding-Reference-Cited by-同舟云学术

Pb(Zr,Ti)O3-silicon heterostructures fabricated by direct wafer bonding

Published:1998-04 Issue:1-4 Volume:19 Page:95-109
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Alexe Marin¹,Scott James F.¹²,Pignolet Alain¹,Hesse Dietrich¹,Gösele Ulrich¹

Affiliation:

1. a Max-Planck Institute of Microstructure Physics , Weinberg, 2, D-06120, Halle (Saale), Germany

2. b University of New South Wales, Faculty of Science , Sydney, 2052, Australia

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808012697

Reference18 articles.

1. 256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V

2. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

3. Ferroelectric gate transistors

4. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures

5. Characteristics of ferroelectric gate mos and mosfets

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. One-Dimensional Ferroelectrics: Nanowires and Nanotubes;Ferroelectrics;2012-01

2. Investigation of domain related topography formation during chemical mechanical polishing of piezoelectric ceramic material;Materials Science and Technology;2009-11

3. Adhesion quantification methods for wafer bonding;Materials Science and Engineering: R: Reports;2005-12

4. Wafer Bonding;Ferroelectric Memories;2000

5. Direct wafer bonding and layer transfer-a new approach to integration of ferroelectric oxides into silicon technology;Ferroelectrics;1999-06