A comparison of Schottky-limited and space-charge-limited currents in SrBi2Ta2O9 thin films-Reference-Cited by-同舟云学术

A comparison of Schottky-limited and space-charge-limited currents in SrBi2Ta2O9 thin films

Published:1998-09 Issue:1-4 Volume:21 Page:241-249
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Watanabe Koji¹²,Hartmann Andreas J.²,Lamb Robert N.²,Scott James F.²

Affiliation:

1. a Research Center, Sony Corporation Atsugi Technology Center , 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken , 243 , JAPAN

2. b Faculty of Science and Technology , University of New South Wales , Sydney , 2052 , AUSTRALIA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808202067

Reference13 articles.

1. The bandgap of SrBi2Ta2O9

2. Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method

3. Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature

4. Development of a new annealing process to allow new top electrode materials for SrBi2Ta2O9 capacitors

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