Activity of Sub‐Band Gap States in Ferroelectric Pb(Zr 0.2 Ti 0.8 )O 3 Thin Films-Reference-Cited by-同舟云学术

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Activity of Sub‐Band Gap States in Ferroelectric Pb(Zr 0.2 Ti 0.8 )O 3 Thin Films

Published:2020-02-13 Issue:4 Volume:6 Page:1900966
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Ramakrishnegowda Niranjan¹²,Yun Yeseul¹²,Knoche David S.¹²,Mühlenbein Lutz¹²,Li Xinye¹²,Bhatnagar Akash¹²^ORCID

Affiliation:

1. Zentrum für Innovationskompetenz SiLi‐nano 06120 Halle (Saale) Germany

2. Institute of PhysicsMartin‐Luther‐Universität Halle‐Wittenberg 06120 Halle (Saale) Germany

Funder

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

European Regional Development Fund

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900966

Reference46 articles.

1. PZT thin films for microsensors and actuators: Where do we stand?

2. Ferroelectric Memories

3. PZT thin films for piezoelectric microactuator applications

4. The bulk photovoltaic effect in ferroelectric Pb(Zr, Ti)O3 thin films

5. Barrier photovoltaic effects in PZT ferroelectric thin films

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Narrow Bandgap Inorganic Ferroelectric Thin Film Materials;Advanced Materials Interfaces;2022-09-20

2. The regulation of ferroelectric photovoltaics by non–compensated doping engineering;Ceramics International;2022-02

3. Design of oxygen vacancy in BiFeO3-based films for higher photovoltaic performance;Applied Surface Science;2022-02

4. Bulk-Controlled Photovoltaic Effect in Nanometer-Thick Ferroelectric Pb(Zr0.2Ti0.8)O3 Thin Films and the Role of Domain Walls;ACS Applied Nano Materials;2020-11-24

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