Yb and Ca Doped Ba0.6Sr0.4TiO3 for device application near room temperature-Reference-Cited by-同舟云学术

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Yb and Ca Doped Ba0.6Sr0.4TiO3 for device application near room temperature

Published:1999-08 Issue:1-4 Volume:24 Page:327-339
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Barnes Frank S.¹,Wu Huey-Daw²,Benton Ralph³,Chumchuensuk Sichol⁴,Muthitacharoen Anak⁴,Xu Bi Yue⁴

Affiliation:

1. a University of Colorado, Boulder, ECE Dept. , CB 425, Boulder, CO, 80309-0425, (303)492-8225

2. b Code 6672 , Naval Research Laboratory , 4555 Overlook Ave. SW, Washington, D.C., 20375-5345, (202)404-2094

3. c Dream Team Technologies , 1055 Auraria Pkwy Denver, CO, 80204, (303)228-3453

4. d University of Colorado Boulder, ECE Dept , CB 425, Room #ECEE 129 Boulder, CO, 80309-0425, (303)492-4298

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908215602

Reference6 articles.

1. Some microwave applications of BaSrTiO3 and high temperature superconductors

2. Structure/property relationships in ferroelectric thin films for frequency agile microwave electronics

3. Doped Ba0.6Sr0.4TiO3 thin films for microwave device applications at room temperature

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