XXXIX. Further observations of growth patterns on silicon carbide (Si-C) crystals-Reference-Cited by-同舟云学术

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XXXIX. Further observations of growth patterns on silicon carbide (Si-C) crystals

Published:1952-04 Issue:339 Volume:43 Page:441-446
ISSN:1941-5982
Container-title:The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science
language:en
Short-container-title:The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science

Author:

Verma Ajit Ram

Publisher

Informa UK Limited

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786440408520176

Reference6 articles.

1. The growth of crystals and the equilibrium structure of their surfaces

2. CII. The growth of carborundum : Dislocations and polytypism

3. Dislocations in a simple cubic lattice

4. The size of a dislocation

5. The mechanism of plastic deformation of crystals. Part I.—Theoretical

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The character of micropipes in silicon carbide crystals;Philosophical Magazine;2006-03-21

2. Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbide;Philosophical Magazine A;2001-12

3. Typical hillocks and spirals on flux-grown DyFeO3 crystal surfaces;Journal of Materials Science;1987-06

4. A mechanism for the origin of screw dislocation sequences, giant screw dislocations, and polytypism in platelet crystals;Philosophical Magazine A;1980-10

5. Unit cell step structures on vapour-grown Cr2S3 single crystals;Journal of Crystal Growth;1978-07

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