Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbide
Author:
Publisher
Informa UK Limited
Subject
Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/01418610108217171
Reference32 articles.
1. Dislocations in Silicon Carbide
2. Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype
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4. White-beam synchrotron topographic studies of defects in 6H-SiC single crystals
5. Edington, J. W. 1975.Interpretation of Transmission Electron Micrographs, p. 5London: Macmillan.
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