Recent Advances in Insulated Gate Technology for GaAs and InP MISFETs
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/02564602.1997.11416701
Reference35 articles.
1. Silicon nitride/(NH4)2Sx passivation of n-GaAs to unpin the Fermi level
2. Sulfide treated GaAs MISFET's with gate insulator of photo-CVD grown P/sub 3/N/sub 5/ film
3. Enhancement mode InP MISFET's with sulfide passivation and photo-CVD grown P3N5 gate insulators
4. GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors
5. Si3N4/Si/Ge/GaAs metal‐insulator‐semiconductor structures grown by in situ chemical vapor deposition
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1. Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps;Thin Solid Films;2003-11
2. Description of the frequency behaviour of metal–SiO2–GaAs structure characteristics by electrical equivalent circuit with constant phase element;Thin Solid Films;2002-08
3. Adsorption of [(tBu)GaS]4 on the GaAs(001)-(4×2) surface;Surface Science;2000-12
4. Effect of initial surface reconstruction on the GaS/GaAs(001) interface;Applied Physics Letters;1999-11-22
5. Adsorption of [(tBu)GaS]4 on GaAs(001)-(2×4);Surface Science;1999-05
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