Modeling and Simulation-Based Investigation of 2-D Symmetric Double Gate Dopingless-TFET and Its Circuit Performance for Low-Power Applications-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Modeling and Simulation-Based Investigation of 2-D Symmetric Double Gate Dopingless-TFET and Its Circuit Performance for Low-Power Applications

Published:2021-04-22 Issue: Volume: Page:1-12
ISSN:0256-4602
Container-title:IETE Technical Review
language:en
Short-container-title:IETE Technical Review

Author:

Sharma Monika¹,Narang Rakhi²,Saxena Manoj³^ORCID,Gupta Mridula¹

Affiliation:

1. Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, New Delhi, 110021, India

2. Department of Electronics, Sri Venkateswara College, University of Delhi, New Delhi, 110021, India

3. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, 110078, India

Funder

Council of Scientific & Industrial Research, India

University Grants Commission

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/02564602.2021.1912661

Reference41 articles.

1. MOSFET Models for VLSI Circuit Simulation

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric

4. Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor

5. An Analytic Model for Heterojunction Tunnel FETs With Exponential Barrier

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling;ECS Journal of Solid State Science and Technology;2024-04-01

2. Analytical modeling and numerical simulation of graded JAM Split Gate-All-Around (GJAM-SGAA) Bio-FET for label free Avian Influenza antibody and DNA detection;Microelectronics Journal;2023-12

3. Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor;Nanotechnology;2022-12-13

4. Investigation of Nanosheet-FET Based Logic Gates at Sub-7 nm Technology Node for Digital IC Applications;Silicon;2022-05-13

5. Modelling and Simulation of Ge Absorber-based Tunnel Field-Effect Phototransistor at 1550 nm;IETE Technical Review;2022-03-23

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3