The effect of screening on the lattice images of ZnSe and GaAs
Author:
Affiliation:
1. a Department of Physics, Faculty of Science , Science University of Tokyo , Shinjuku-ku , Tokyo , 162 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818808208504
Reference16 articles.
1. n-Beam lattice images. III. Upper limits of ionicity in W4Nb26O77
2. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
3. The scattering of electrons by atoms and crystals. I. A new theoretical approach
4. Relativistic Hartree–Fock X-ray and electron scattering factors
5. Dynamical Theory of Electron Diffraction in Laue-Case, I. General Theory
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1. Incoherent High-Resolution Z-Contrast Imaging of Silicon and Gallium Arsenide Using HAADF-STEM;MRS Proceedings;1999
2. n-Beam Dynamical Calculations;Advances in Electronics and Electron Physics Volume 86;1993
3. Lattice images of narrow-bandgap semiconductors: InP, InAs and InSb;Philosophical Magazine B;1992-11
4. (100) Lattice images of GaAs and ZnSe crystals;Philosophical Magazine A;1991-07
5. Screening effect on ⟨110⟩ high-resolution electron microscopy image of compound semiconductors;Philosophical Magazine B;1991-05
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