Lattice images of narrow-bandgap semiconductors: InP, InAs and InSb-Reference-Cited by-同舟云学术

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Lattice images of narrow-bandgap semiconductors: InP, InAs and InSb

Published:1992-11 Issue:5 Volume:66 Page:573-585
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Watanabe K.¹,Hashikawa N.¹,Hiratsuka K.¹,Nakamura K.¹,Tsuruta C.¹,Yamaguchi H.²,Hashimoto I.³

Affiliation:

1. a Tokyo Metropolitan Technical College , 1-10-40 Higashiohi Shinagawa-ku, Tokyo , 140 , Japan

2. b Department of Physics, Faculty of Science , Science University of Tokyo, 1-3 Kagurazaka , Shinjuku-ku, Tokyo , 162 , Japan

3. c Hitachi Keisoku Engineering Co., Ltd., 882 Ichige , Katsuta-shi , Ibaraki 312 , Japan

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819208207661

Reference33 articles.

1. Multiple phase formation in the binary system Nb2O5–WO3. VI. Electron microscopic observation and evaluation of non-periodic shear structures

2. n-Beam lattice images. III. Upper limits of ionicity in W4Nb26O77

3. Direct observation of atomic columns in semiconductors by HREM at 400 kV

4. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors

5. The scattering of electrons by atoms and crystals. I. A new theoretical approach

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of thermal vibration on HRTEM images of GaAs and InP;Physica Status Solidi (a);1995-04-16

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