Growth of epitaxial silica on vicinal Si(001) surfaces during thermal oxidation in O2-Reference-Cited by-同舟云学术

Growth of epitaxial silica on vicinal Si(001) surfaces during thermal oxidation in O2

Published:1989-03 Issue:3 Volume:59 Page:339-363
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Rochet F.¹,Froment M.²,D'anterroches C.³,Roulet H.⁴,Dufour G.⁴

Affiliation:

1. a Groupe de Physique des Solides de l'Ecole Normale Supérieure , Université Paris VII , Tour 23, 2 place Jussieu, 75251 , Paris , Cedex 05 , France

2. b Physique des Liquides et Electrochimie (LPIS du CNRS) , Université Pierre et Marie Curie , Tour 22, 4 place Jussieu, 75252 , Paris , Cedex 05 , France

3. c Centre National d'Etude des Télécommunications , Chemin du Vieux Chêne, 38243 , Meylan , Cedex , France

4. d Laboratoire de Chimie Physique (Laboratoire associé au CNRS 176) , Université Pierre et Marie Curie , 11 rue Pierre et Marie Curie, 75231 , Paris , Cedex 05 , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818908220183

Reference22 articles.

1. Atomic structure of [011] and [001] near-coincident tilt boundaries in germanium and silicon

2. Microanalysis by the direct observation of nuclear reactions using a 2 MeV Van de Graaff

3. Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals

4. Electron states inα-quartz: A self-consistent pseudopotential calculation

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