Transient photocurrents in a-Si: H and weak electron-phonon coupling processes
Author:
Affiliation:
1. a Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation , Musashino-shi , Tokyo , 180 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508240573
Reference23 articles.
1. Recombination processes ina-Si:H: Spin-dependent photoconductivity
2. Estimation methods for localized-state distribution profiles in undoped and phosphorous-dopeda−Si:H
3. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
4. Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous Silicon
5. Anomalous surface photoconductivity in hydrogenated amorphous silicon
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